GATE ECE GATE ECE — Core — practice questions
26 free MCQs with worked solutions. Tap any question for the answer + explanation, or practice them all in the app.
Practice GATE ECE GATE ECE — Core in the app →In an intrinsic semiconductor at room temperature, the concentration of electrons equals:In an n-type semiconductor, majority carriers are:Mass-action law in semiconductors:Energy gap of silicon at 300 K is approximately:Zener diode is operated in:BJT transistor terminals are:Common-emitter current gain β (or h_FE):In NMOS enhancement mode, drain current I_D in saturation:For inverting amplifier (R_in to inv input, R_f feedback): voltage gain:For non-inverting amplifier (input to + terminal, R_in & R_f resistor divider): gain:NAND gate truth table: output is 0 when:De Morgan's theorem:Number of select lines for a 16:1 multiplexer:Decimal 13 in binary:Convert binary 10110 to decimal:In 2's complement representation, range of 8-bit number:Fourier transform of a delta function δ(t):Transfer function 1/(s² + 2s + 5) has poles at:In AM (amplitude modulation), modulating signal varies:FM (frequency modulation) varies:Shannon channel capacity:Characteristic impedance of a lossless transmission line:VSWR (Voltage Standing Wave Ratio) for matched load (R_L = Z_0):Wave equation in vacuum (Maxwell):Cutoff frequency of RC low-pass filter:For n-bit ADC with full-scale V_FS, resolution (LSB) is: