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In NMOS enhancement mode, drain current I_D in saturation:
AConstant
B∝ V_DS
CLinear in V_GS
D∝ (V_GS - V_th)² (square law)
Answer & Solution
Correct answer: D. ∝ (V_GS - V_th)² (square law)
NMOS saturation (V_DS > V_GS - V_th): I_D = (μ_n C_ox W/2L) × (V_GS - V_th)². Square law. V_th = threshold voltage. In triode region: I_D linear in V_DS (for small V_DS). Pinch-off at V_DS = V_GS - V_th.
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