TS EAPCET (Engineering) Semiconductor Devices — practice questions
20 free MCQs with worked solutions. Tap any question for the answer + explanation, or practice them all in the app.
Practice TS EAPCET (Engineering) Semiconductor Devices in the app →Conductivity of a material is highest in:Energy gap (band gap) of pure silicon at room temperature:In an intrinsic (pure) semiconductor at T > 0:n-type semiconductor is doped with:p-type semiconductor is doped with:A diode allows current to flow:For forward bias of p-n diode:Zener diode is operated in:A diode in half-wave rectifier produces output for:In a transistor (npn), the emitter is:A logic NOT gate (inverter) outputs:For NAND gate: output is 0 when:Solar cell converts:Intrinsic carrier concentration of Si at 300 K is approximately:In doped semiconductor at thermal equilibrium: n_e × n_h =For Si diode with reverse saturation current I₀ = 10⁻¹² A at room temperature (V_T = kT/e ≈ 0.026 V), forward Common-emitter transistor with β = 100 has base current 50 μA. Collector current:For a full-wave bridge rectifier with AC input V_rms, peak DC output voltage:Truth table for AND gate (2 inputs): output is 1 when:For NPN transistor in active mode, base-emitter junction is ___ and base-collector is ___: