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JEE Main Semiconductor Electronics — practice questions — page 3

Explore 125 free Semiconductor Electronics questions in JEE Main Physics. Open each question or exercise to read its content, reference answers and available explanation.

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Semiconductor Electronics questions and exercises with answers

Showing questions 61–90 of 125.

The property of a diode that lets it convert alternating voltage is used in a circuit called a:Read the answer and worked solution →The energy gap of silicon is given as approximately:Read the answer and worked solution →The energy gap of germanium is given as approximately:Read the answer and worked solution →n-type against p-typeRead the answer and worked solution →Sort by the band gapRead the answer and worked solution →Intrinsic and extrinsicRead the answer and worked solution →One word is wrongRead the answer and worked solution →Type the band gapsRead the answer and worked solution →Before 1948, electronic devices were mostly vacuum tubes. What was discovered that year?Read the answer and worked solution →In a vacuum tube electrons flow only from cathode to anode, so such tubes are called:Read the answer and worked solution →Compared with valves, semiconductor devices are:Read the answer and worked solution →A material whose resistivity lies between a metal and an insulator is a:Read the answer and worked solution →In a silicon crystal each atom is surrounded by how many nearest neighbours?Read the answer and worked solution →Neighbouring Si atoms share electron pairs. Each shared pair forms a:Read the answer and worked solution →When a bond breaks and an electron leaves, the vacancy left behind behaves like a free particle with:Read the answer and worked solution →What is special about semiconductors compared with metals regarding carriers?Read the answer and worked solution →At room temperature, the conductivity of a pure intrinsic semiconductor is:Read the answer and worked solution →Adding a few parts per million of impurity to a semiconductor makes its conductivity:Read the answer and worked solution →Deliberately adding an impurity to a semiconductor is called:Read the answer and worked solution →Arsenic, antimony and phosphorus have valency 5, so they are:Read the answer and worked solution →A pentavalent dopant gives one extra electron for conduction, so it is called a:Read the answer and worked solution →Doping silicon with boron, which has three valence electrons, gives:Read the answer and worked solution →Despite extra carriers, a doped crystal as a whole is:Read the answer and worked solution →A p-n junction with metal contacts at its ends is a:Read the answer and worked solution →Under forward bias the depletion layer:Read the answer and worked solution →A full-wave rectifier built with two diodes needs a transformer with a:Read the answer and worked solution →Photodiodes, LEDs and solar cells are together called:Read the answer and worked solution →An LED converts electrical energy into:Read the answer and worked solution →The five common logic gates are NOT, AND, OR, NAND and:Read the answer and worked solution →The function of a logic gate is defined by its:Read the answer and worked solution →

Worked practice questions

The property of a diode that lets it convert alternating voltage is used in a circuit called a:

  1. Regulator
  2. Rectifier
  3. Resistor
  4. Reflector
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Correct answer: B. Rectifier

1. A diode conducts in one direction and not the other. 2. That one-way behaviour can turn alternating into direct. 3. This property is used to rectify alternating voltages and the circuit is called a rectifier. 4. So the answer is a rectifier. _Source: syllabus Physics Part II, Ch 14 'Semiconductor Electronics'_

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The energy gap of silicon is given as approximately:

  1. 0.7 electron volts
  2. 9.1 electron volts
  3. 1.1 electron volts
  4. 5.4 electron volts
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Correct answer: C. 1.1 electron volts

1. The three group-four elements have very different band gaps. 2. Diamond is the largest and germanium the smallest. 3. For C, Si and Ge the energy gaps are 5.4 eV, 1.1 eV and 0.7 eV respectively. 4. So silicon is about 1.1 eV. _Source: syllabus Physics Part II, Ch 14 'Semiconductor Electronics'_

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The energy gap of germanium is given as approximately:

  1. 5.4 electron volts
  2. 1.1 electron volts
  3. 9.1 electron volts
  4. 0.7 electron volts
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Correct answer: D. 0.7 electron volts

1. Germanium conducts more readily than silicon at room temperature. 2. That follows from having the smaller gap of the two. 3. For C, Si and Ge the energy gaps are 5.4 eV, 1.1 eV and 0.7 eV respectively. 4. So germanium is about 0.7 eV. _Source: syllabus Physics Part II, Ch 14 'Semiconductor Electronics'_

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