GATE ECE gateece_devices — practice questions
12 free MCQs with worked solutions. Tap any question for the answer + explanation, or practice them all in the app.
Practice GATE ECE gateece_devices in the app →For an intrinsic semiconductor at thermal equilibrium, the relation between electron concentration n and hole In a p-n junction at equilibrium (no applied bias), the net current across the junction is which?The ideal diode equation I = Is·(exp(V/(η·VT)) - 1) uses VT = kT/q. At T = 300 K, VT is approximately which vaFor a forward-biased p-n junction, the depletion-region width W varies with applied voltage Va as which?The transconductance gm of a BJT in active region with collector current IC and thermal voltage VT is which?An NMOS transistor in saturation operates when which condition holds (V_DS, V_GS, V_TN)?For a MOSFET in saturation, the small-signal drain current is I_D = (μ_n·C_ox/2)·(W/L)·(V_GS - V_TN)². The traChannel-length modulation in a MOSFET in saturation introduces which effect into the I_D equation?The Hall effect in a p-type semiconductor under magnetic field B and current density J produces a Hall voltageIn a Zener diode operating in reverse breakdown, the dominant breakdown mechanism for low-voltage (<5 V) ZenerFor a BJT in active mode with collector current IC = β·IB + (β+1)·ICBO, the relation between α (CB) and β (CE)The Einstein relation for diffusion and mobility in semiconductors at temperature T is which?