alleryStart learning →Channel-length modulation in a MOSFET in saturation introduces which effect into the I_D equation?
AA factor (1 + λ·V_DS) raising I_D with V_DS
BAn exponential cut-off below threshold
CA negative coefficient of V_GS only
DA delta function at V_DS = V_TN only
Answer & Solution
Correct answer: A. A factor (1 + λ·V_DS) raising I_D with V_DS
**Real MOSFETs:** I_D = (μC_ox/2)(W/L)(V_GS-V_TN)²(1+λ·V_DS).
Effective channel shortens as V_DS rises.
Analog to BJT Early effect (parameter λ ~ 1/VA).
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