The ideal diode equation I = Is·(exp(V/(η·VT)) - 1) uses VT = kT/q. At T = 300 K, VT is approximately which value?
A≈ 0.3 V (Ge forward drop)
B≈ 0.7 V (Si forward drop)
C≈ 25.85 mV (thermal voltage)
D≈ 1.1 V (Si bandgap)
Answer & Solution
Correct answer: C. ≈ 25.85 mV (thermal voltage)
VT = kT/q = (1.38e-23·300)/1.6e-19 ≈ 25.85 mV. Often rounded to 26 mV at room temperature. Distinct from the 0.7 V Si turn-on voltage.
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