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For Si diode with reverse saturation current I₀ = 10⁻¹² A at room temperature (V_T = kT/e ≈ 0.026 V), forward current at V = 0.6 V:
A1 A
BCannot determine
C~10⁻¹² A
D≈ 10⁻¹² × exp(0.6/0.026) ≈ 10⁻¹² × 1.07 × 10¹⁰ ≈ 0.011 A
Answer & Solution
Correct answer: D. ≈ 10⁻¹² × exp(0.6/0.026) ≈ 10⁻¹² × 1.07 × 10¹⁰ ≈ 0.011 A
Shockley equation: I = I₀ [exp(V/V_T) - 1]. For V >> V_T: I ≈ I₀ exp(V/V_T) = 10⁻¹² × e^23.1 ≈ 10⁻¹² × 1.07 × 10¹⁰ ≈ 1.07 × 10⁻² A ≈ 11 mA.
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