UP Board Class 12 Semiconductor Electronics — practice questions
16 free MCQs with worked solutions. Tap any question for the answer + explanation, or practice them all in the app.
Practice UP Board Class 12 Semiconductor Electronics in the app →An intrinsic semiconductor at room temperature has:Doping silicon with a pentavalent element like phosphorus creates a semiconductor in which:A p-n junction diode is forward biased when:The output of an AND gate is HIGH only when:On the basis of the energy-band picture, materials are classified by the size of the energy gap $E_g$ between At absolute zero ($T = 0\,\text{K}$), a pure intrinsic semiconductor behaves like a(n)In a pure intrinsic semiconductor at temperature $T > 0\,\text{K}$, the relation between the number density ofPure silicon is doped with a small amount of PHOSPHORUS (a pentavalent element from group 15). The resulting sIf silicon is doped with a TRIVALENT impurity such as boron (or indium), the resulting semiconductor isWhen a p-n junction is formed (BEFORE any external bias is applied), a thin region near the junction develops When a p-n junction diode is subjected to a FORWARD BIAS (p-side connected to the positive terminal of the batUnder REVERSE BIAS, an IDEAL p-n junction diode would carry zero current. A real diode, however, carries a verAn intrinsic silicon sample at room temperature has $n_i \approx 1.5\times 10^{16}\,\text{m}^{-3}$. After dopiThe barrier (built-in) potential of an unbiased silicon p-n junction at room temperature is approximatelyA semiconductor diode is connected with its p side at $+5\,\text{V}$ and its n side at $+3\,\text{V}$. Which bA p-n junction in REVERSE BIAS is irradiated with light of photon energy slightly GREATER than the band gap of